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Defect Analysis for Field-Effect-Transistor Based on 2D Materials: Drain Current Transient, 1/f noise, and Arrhenius Approach

Authors
정문석
Issue Date
24-Apr-2025
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/216655
Place
대전컨벤션센터
Conference Name
2025 KPS Spring Meeting
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서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers

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