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초저온 전자온도 플라즈마를 활용한 Gate-All-Around FET 제조 공정에서의 플라즈마 유발 손상 저감

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dc.contributor.author정진욱-
dc.date.accessioned2026-07-06T07:06:02Z-
dc.date.available2026-07-06T07:06:02Z-
dc.date.issued2025-08-22-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/218077-
dc.title초저온 전자온도 플라즈마를 활용한 Gate-All-Around FET 제조 공정에서의 플라즈마 유발 손상 저감-
dc.typeConference-
dc.citation.conferenceName제69회 한국진공학회-
dc.citation.conferencePlacePhoenix Island, Jeju, Korea-
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서울 공과대학 > 서울 전기공학전공 > 2. Conference Papers

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