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Reduction of Plasma-Induced Damage via Ultra-Low Electron Temperature Plasma in Gate-All-Around FET Fabrication
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 정진욱 | - |
| dc.date.accessioned | 2026-07-06T07:30:20Z | - |
| dc.date.available | 2026-07-06T07:30:20Z | - |
| dc.date.issued | 2025-09-25 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/218080 | - |
| dc.title | Reduction of Plasma-Induced Damage via Ultra-Low Electron Temperature Plasma in Gate-All-Around FET Fabrication | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | AVS 71st International Symposium & Exhibition | - |
| dc.citation.conferencePlace | Charlotte Convention Center, Charlotte, North Carolina, USA | - |
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Collections - 서울 공과대학 > 서울 전기공학전공 > 2. Conference Papers
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Related Researcher
- Chung, Chin Wook
- COLLEGE OF ENGINEERING (MAJOR IN ELECTRICAL ENGINEERING)