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Threshold Switching Characteristics of ZnTe and 1S1R Application

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dc.contributor.author홍진표-
dc.date.accessioned2021-08-02T16:00:45Z-
dc.date.available2021-08-02T16:00:45Z-
dc.date.issued2019-02-14-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/21818-
dc.titleThreshold Switching Characteristics of ZnTe and 1S1R Application-
dc.typeConference-
dc.citation.conferenceNameThe 26th Korean Conference on Semiconductors-
dc.citation.conferencePlace강원도 웰리힐리파크-
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서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers

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