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A Coalesced Tensor Reduction Architecture for Scalable All-Bank PIM Execution

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dc.contributor.authorPark, Taehyung-
dc.contributor.authorLee, Hyuk-Jae-
dc.contributor.authorRhee, Chae Eun-
dc.date.accessioned2026-07-10T07:30:35Z-
dc.date.available2026-07-10T07:30:35Z-
dc.date.issued2026-06-
dc.identifier.issn2156-3357-
dc.identifier.issn2156-3365-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/219059-
dc.description.abstractThe embedding layer in deep learning recommendation models (DLRM) is highly memory-bound and exhibits skewed, irregular access patterns. These characteristics lead to severe load imbalance and performance bottlenecks in processing in memory (PIM) architectures. We propose TRAM (Two-level Reduction Accelerator for Memory), a heterogeneous accelerator that integrates High Bandwidth Memory based PIM architecture (HBM-PIM) with conventional dual in-line memory modules (DIMMs) to accelerate batched embedding vector reductions. TRAM reduces redundant hot-vector accesses and employs a host-side scheduling mechanism that overlaps bank-PIM operations inside DRAM banks with logic-PIM operations, where processing units are located in the buffer die. This overlap eliminates command-bandwidth stalls and compute-bound delays. In addition, metadata-aware optimizations reduce row/column access overhead by reusing contiguous address patterns within each bank. Evaluation on six recommendation datasets and three embedding dimensions demonstrates that TRAM achieves up to 2.8× speedup and 3.0× energy reduction compared to state-of-the-art heterogeneous memory systems, while preserving full compatibility with the standard DRAM interface.-
dc.format.extent14-
dc.language영어-
dc.language.isoENG-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleA Coalesced Tensor Reduction Architecture for Scalable All-Bank PIM Execution-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/JETCAS.2026.3657823-
dc.identifier.scopusid2-s2.0-105028890306-
dc.identifier.wosid001796293500018-
dc.identifier.bibliographicCitationIEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS, v.16, no.2, pp 389 - 402-
dc.citation.titleIEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS-
dc.citation.volume16-
dc.citation.number2-
dc.citation.startPage389-
dc.citation.endPage402-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.subject.keywordPlusArchitecture-
dc.subject.keywordPlusCost reduction-
dc.subject.keywordPlusDynamic random access storage-
dc.subject.keywordPlusEmbeddings-
dc.subject.keywordPlusInterface states-
dc.subject.keywordPlusMemory architecture-
dc.subject.keywordPlusThree dimensional integrated circuits-
dc.subject.keywordAuthorVectors-
dc.subject.keywordAuthorBandwidth-
dc.subject.keywordAuthorComputer architecture-
dc.subject.keywordAuthorRandom access memory-
dc.subject.keywordAuthorThroughput-
dc.subject.keywordAuthorCircuits and systems-
dc.subject.keywordAuthorTensors-
dc.subject.keywordAuthorRecommender systems-
dc.subject.keywordAuthorMemory architecture-
dc.subject.keywordAuthorFeature extraction-
dc.subject.keywordAuthorRecommendation system-
dc.subject.keywordAuthor3D-stacked memory-
dc.subject.keywordAuthorprocessing-in-memory-
dc.subject.keywordAuthorall-bank mode-
dc.subject.keywordAuthorbuffer die-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/11363574-
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