A Coalesced Tensor Reduction Architecture for Scalable All-Bank PIM Execution
- Authors
- Park, Taehyung; Lee, Hyuk-Jae; Rhee, Chae Eun
- Issue Date
- Jun-2026
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Vectors; Bandwidth; Computer architecture; Random access memory; Throughput; Circuits and systems; Tensors; Recommender systems; Memory architecture; Feature extraction; Recommendation system; 3D-stacked memory; processing-in-memory; all-bank mode; buffer die
- Citation
- IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS, v.16, no.2, pp 389 - 402
- Pages
- 14
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS
- Volume
- 16
- Number
- 2
- Start Page
- 389
- End Page
- 402
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/219059
- DOI
- 10.1109/JETCAS.2026.3657823
- ISSN
- 2156-3357
2156-3365
- Abstract
- The embedding layer in deep learning recommendation models (DLRM) is highly memory-bound and exhibits skewed, irregular access patterns. These characteristics lead to severe load imbalance and performance bottlenecks in processing in memory (PIM) architectures. We propose TRAM (Two-level Reduction Accelerator for Memory), a heterogeneous accelerator that integrates High Bandwidth Memory based PIM architecture (HBM-PIM) with conventional dual in-line memory modules (DIMMs) to accelerate batched embedding vector reductions. TRAM reduces redundant hot-vector accesses and employs a host-side scheduling mechanism that overlaps bank-PIM operations inside DRAM banks with logic-PIM operations, where processing units are located in the buffer die. This overlap eliminates command-bandwidth stalls and compute-bound delays. In addition, metadata-aware optimizations reduce row/column access overhead by reusing contiguous address patterns within each bank. Evaluation on six recommendation datasets and three embedding dimensions demonstrates that TRAM achieves up to 2.8× speedup and 3.0× energy reduction compared to state-of-the-art heterogeneous memory systems, while preserving full compatibility with the standard DRAM interface.
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