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A Coalesced Tensor Reduction Architecture for Scalable All-Bank PIM Execution

Authors
Park, TaehyungLee, Hyuk-JaeRhee, Chae Eun
Issue Date
Jun-2026
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Vectors; Bandwidth; Computer architecture; Random access memory; Throughput; Circuits and systems; Tensors; Recommender systems; Memory architecture; Feature extraction; Recommendation system; 3D-stacked memory; processing-in-memory; all-bank mode; buffer die
Citation
IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS, v.16, no.2, pp 389 - 402
Pages
14
Indexed
SCIE
SCOPUS
Journal Title
IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS
Volume
16
Number
2
Start Page
389
End Page
402
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/219059
DOI
10.1109/JETCAS.2026.3657823
ISSN
2156-3357
2156-3365
Abstract
The embedding layer in deep learning recommendation models (DLRM) is highly memory-bound and exhibits skewed, irregular access patterns. These characteristics lead to severe load imbalance and performance bottlenecks in processing in memory (PIM) architectures. We propose TRAM (Two-level Reduction Accelerator for Memory), a heterogeneous accelerator that integrates High Bandwidth Memory based PIM architecture (HBM-PIM) with conventional dual in-line memory modules (DIMMs) to accelerate batched embedding vector reductions. TRAM reduces redundant hot-vector accesses and employs a host-side scheduling mechanism that overlaps bank-PIM operations inside DRAM banks with logic-PIM operations, where processing units are located in the buffer die. This overlap eliminates command-bandwidth stalls and compute-bound delays. In addition, metadata-aware optimizations reduce row/column access overhead by reusing contiguous address patterns within each bank. Evaluation on six recommendation datasets and three embedding dimensions demonstrates that TRAM achieves up to 2.8× speedup and 3.0× energy reduction compared to state-of-the-art heterogeneous memory systems, while preserving full compatibility with the standard DRAM interface.
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