Formation of highly porous electrochemically etched silicon carbide: A novel reusable adsorbent for air purification technology
- Authors
- Senthilnathan, Jaganathan; Selvaraj, Ambika; Lee, Jechan; Kim, Ki-Hyun; Yoshimura, Masahiro
- Issue Date
- May-2019
- Publisher
- ELSEVIER SCI LTD
- Keywords
- Electrochemical etching; Carbon-rich porous; Formaldehyde; Glutaraldehyde; Pore diffuse ion
- Citation
- JOURNAL OF CLEANER PRODUCTION, v.218, pp 521 - 528
- Pages
- 8
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CLEANER PRODUCTION
- Volume
- 218
- Start Page
- 521
- End Page
- 528
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2205
- DOI
- 10.1016/j.jclepro.2019.02.032
- ISSN
- 0959-6526
1879-1786
- Abstract
- In this study, carbon-rich mesoporous silicon carbide (CRP-SiC: thickness of 1.3 mu m and surface area of 77.3 m(2)/g) was obtained by electrochemical etching of polycrystalline SiC using HF/acetonitrile (1:5.6 ratio) at an optimum current density of 30 mA/cm(2). The selective etching of Si from SiC was validated by Raman and X-ray diffraction analyses. High resolution-transmission electron microscope and atomic force microscope analysis showed the mesoporous structure (range: 10-100 nm) and a valley-and-peak form on the surface of CRP-SiC, respectively. The potential utility of CRP-SiC as an ideal adsorbent for commercial application was investigated against the low-molecular aliphatic volatile organic compounds (VOCs) like glutaraldehyde (GA) and formaldehyde (FA) as model target compounds. The maximum specific adsorption capacity of CRP-SiC, when measured for the GA and FA at the initial concentration 30 ppm, were 89.1 and 79.2 mg/g, respectively. The total adsorption capacity of this adsorbent was above 90%, when reused up to five times. The adsorption performance of CRP-SiC was also remarkably high in terms of partition coefficient relative to many other types of common sorbents (e.g., powder or granular activated carbon). The potential of carbon-rich surface on a stable and hard SiC semiconducting material is investigated in depth to help find the better alternative for the conventional or other well recognized adsorbent for treating VOCs.
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