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Near-infrared thin film phototransistor with energy band-tunable zinc oxynitride semiconductor

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dc.contributor.authorLee, H.-M.-
dc.contributor.authorJeong, H.-J.-
dc.contributor.authorPark, E.-J.-
dc.contributor.authorRim, Y.S.-
dc.contributor.authorPark, J.-S.-
dc.date.accessioned2021-08-02T16:02:04Z-
dc.date.available2021-08-02T16:02:04Z-
dc.date.created2021-06-30-
dc.date.issued2018-12-12-
dc.identifier.issn1883-2490-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/22053-
dc.description.abstractWe propose low-bandgap zinc oxynitride semiconductors not only because of high electrical performance, but also their high photoresponsivity in the Vis-NIR regions and tunable bandgap with controlling nitrogen gas ratio during deposition. We also fabricated low PPC phototransistors with tandem structure of IGZO and ZnON thin film.-
dc.language영어-
dc.language.isoen-
dc.publisherInternational Display Workshops-
dc.titleNear-infrared thin film phototransistor with energy band-tunable zinc oxynitride semiconductor-
dc.typeConference-
dc.contributor.affiliatedAuthorPark, J.-S.-
dc.identifier.scopusid2-s2.0-85072119169-
dc.identifier.bibliographicCitation25th International Display Workshops, IDW 2018, pp.264 - 267-
dc.relation.isPartOf25th International Display Workshops, IDW 2018-
dc.relation.isPartOfProceedings of the International Display Workshops-
dc.citation.title25th International Display Workshops, IDW 2018-
dc.citation.startPage264-
dc.citation.endPage267-
dc.citation.conferencePlaceJA-
dc.citation.conferencePlaceNagoya Congress Center-
dc.citation.conferenceDate2018-12-12-
dc.type.rimsCONF-
dc.description.journalClass1-
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