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Near-infrared thin film phototransistor with energy band-tunable zinc oxynitride semiconductor
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, H.-M. | - |
| dc.contributor.author | Jeong, H.-J. | - |
| dc.contributor.author | Park, E.-J. | - |
| dc.contributor.author | Rim, Y.S. | - |
| dc.contributor.author | Park, J.-S. | - |
| dc.date.accessioned | 2021-08-02T16:02:04Z | - |
| dc.date.available | 2021-08-02T16:02:04Z | - |
| dc.date.created | 2021-06-30 | - |
| dc.date.issued | 2018-12-12 | - |
| dc.identifier.issn | 1883-2490 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/22053 | - |
| dc.description.abstract | We propose low-bandgap zinc oxynitride semiconductors not only because of high electrical performance, but also their high photoresponsivity in the Vis-NIR regions and tunable bandgap with controlling nitrogen gas ratio during deposition. We also fabricated low PPC phototransistors with tandem structure of IGZO and ZnON thin film. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | International Display Workshops | - |
| dc.title | Near-infrared thin film phototransistor with energy band-tunable zinc oxynitride semiconductor | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Park, J.-S. | - |
| dc.identifier.scopusid | 2-s2.0-85072119169 | - |
| dc.identifier.bibliographicCitation | 25th International Display Workshops, IDW 2018, pp.264 - 267 | - |
| dc.relation.isPartOf | 25th International Display Workshops, IDW 2018 | - |
| dc.relation.isPartOf | Proceedings of the International Display Workshops | - |
| dc.citation.title | 25th International Display Workshops, IDW 2018 | - |
| dc.citation.startPage | 264 | - |
| dc.citation.endPage | 267 | - |
| dc.citation.conferencePlace | JA | - |
| dc.citation.conferencePlace | Nagoya Congress Center | - |
| dc.citation.conferenceDate | 2018-12-12 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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