Suppression of boron diffusion using carbon co-implantation in DRAM
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Suk Hun | - |
dc.contributor.author | Park, Se Geun | - |
dc.contributor.author | Kim, Shin Deuk | - |
dc.contributor.author | Jung, Hyuck-Chai | - |
dc.contributor.author | Kim, Il Gweon | - |
dc.contributor.author | Kang, Dong-Ho | - |
dc.contributor.author | Kim, Dae Jung | - |
dc.contributor.author | Lee, Kyu Pil | - |
dc.contributor.author | Choi, Joo Sun | - |
dc.contributor.author | Baek, Jung-Woo | - |
dc.contributor.author | Choi, Moonsuk | - |
dc.contributor.author | Park, Yongkook | - |
dc.contributor.author | Choi, Changhwan | - |
dc.contributor.author | Park, Jin-Hong | - |
dc.date.accessioned | 2021-08-02T16:26:49Z | - |
dc.date.available | 2021-08-02T16:26:49Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2016-10 | - |
dc.identifier.issn | 0025-5408 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/22124 | - |
dc.description.abstract | In this paper, germanium pre-amorphization implantation (PAI) and carbon co-implantation (Ge+C co-IIP) were applied to suppress boron diffusion. The corresponding characteristics were investigated in terms of the dopant diffusion, device performance, and its application to dynamic random access memory (DRAM). A shallow dopant profile was indicated and the threshold voltage (V-TH) was reduced by approximately 45 mV by Ge +C co-IIP. In the DRAM device, the VTH mismatch of the sense amplifier NMOS pairs was reduced by approximately 15% and the write characteristics were improved two-fold. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Suppression of boron diffusion using carbon co-implantation in DRAM | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, Changhwan | - |
dc.identifier.doi | 10.1016/j.materresbull.2016.03.011 | - |
dc.identifier.scopusid | 2-s2.0-84961226861 | - |
dc.identifier.wosid | 000381322800005 | - |
dc.identifier.bibliographicCitation | MATERIALS RESEARCH BULLETIN, v.82, pp.22 - 25 | - |
dc.relation.isPartOf | MATERIALS RESEARCH BULLETIN | - |
dc.citation.title | MATERIALS RESEARCH BULLETIN | - |
dc.citation.volume | 82 | - |
dc.citation.startPage | 22 | - |
dc.citation.endPage | 25 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | OPTIMIZATION | - |
dc.subject.keywordAuthor | Semiconductor | - |
dc.subject.keywordAuthor | Electronic materials | - |
dc.subject.keywordAuthor | Diffusion | - |
dc.subject.keywordAuthor | Defect | - |
dc.subject.keywordAuthor | Electrical properties | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S002554081630112X?via%3Dihub | - |
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