Effect of a Graphene Interlayer on the Electrical Properties of an AlGaN/GaN Schottky Diode
DC Field | Value | Language |
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dc.contributor.author | Kim, Yoon Hyung | - |
dc.contributor.author | Han, Sanghoo | - |
dc.contributor.author | Cho, Inje | - |
dc.contributor.author | Lee, Jaehoon | - |
dc.contributor.author | Park, Jinsub | - |
dc.date.accessioned | 2021-08-02T16:27:05Z | - |
dc.date.available | 2021-08-02T16:27:05Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2016-10 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/22144 | - |
dc.description.abstract | We report a simple method for fabricating AlGaN/GaN Schottky barrier diodes (SBDs) that include a graphene layer inserted between the AlGaN and Ni/Au metal layers. The insertion of a graphene interlayer between the Ni/Au metal pads and AlGaN layer produces a contact with ohmic characteristics. Ohmic and Schottky contacts were achieved by depositing graphene/Ni/Au and Ni/Au, respectively, on the AlGaN surface of SBD. The ohmic contacts formed using graphene/Ni/Au displayed a specific contact resistance of 0.23 Omega. cm(2). The optimum annealing temperature for improving device performance was found to be 500 degrees C. The graphene/metal electrode system suggested herein is promising for improving the electrical characteristics of AlGaN/GaN-based optoelectronic devices. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Effect of a Graphene Interlayer on the Electrical Properties of an AlGaN/GaN Schottky Diode | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jinsub | - |
dc.identifier.doi | 10.1166/jnn.2016.13141 | - |
dc.identifier.scopusid | 2-s2.0-84991011191 | - |
dc.identifier.wosid | 000387100600020 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.10, pp.10268 - 10271 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 16 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 10268 | - |
dc.citation.endPage | 10271 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | HEMTS | - |
dc.subject.keywordAuthor | Graphene | - |
dc.subject.keywordAuthor | AlGaN/GaN | - |
dc.subject.keywordAuthor | Schottky Diode | - |
dc.subject.keywordAuthor | Ohmic Contact | - |
dc.subject.keywordAuthor | Schottky Contact | - |
dc.subject.keywordAuthor | Graphene/Ni/Au | - |
dc.identifier.url | https://www.ingentaconnect.com/content/asp/jnn/2016/00000016/00000010/art00020 | - |
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