Effect of a Graphene Interlayer on the Electrical Properties of an AlGaN/GaN Schottky Diode
- Authors
- Kim, Yoon Hyung; Han, Sanghoo; Cho, Inje; Lee, Jaehoon; Park, Jinsub
- Issue Date
- Oct-2016
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Graphene; AlGaN/GaN; Schottky Diode; Ohmic Contact; Schottky Contact; Graphene/Ni/Au
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.10, pp.10268 - 10271
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 16
- Number
- 10
- Start Page
- 10268
- End Page
- 10271
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/22144
- DOI
- 10.1166/jnn.2016.13141
- ISSN
- 1533-4880
- Abstract
- We report a simple method for fabricating AlGaN/GaN Schottky barrier diodes (SBDs) that include a graphene layer inserted between the AlGaN and Ni/Au metal layers. The insertion of a graphene interlayer between the Ni/Au metal pads and AlGaN layer produces a contact with ohmic characteristics. Ohmic and Schottky contacts were achieved by depositing graphene/Ni/Au and Ni/Au, respectively, on the AlGaN surface of SBD. The ohmic contacts formed using graphene/Ni/Au displayed a specific contact resistance of 0.23 Omega. cm(2). The optimum annealing temperature for improving device performance was found to be 500 degrees C. The graphene/metal electrode system suggested herein is promising for improving the electrical characteristics of AlGaN/GaN-based optoelectronic devices.
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