Performance modulation of transparent ALD indium oxide films on flexible substrates: transition between metal-like conductor and high performance semiconductor states
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sheng, Jiazhen | - |
dc.contributor.author | Choi, Dong-Won | - |
dc.contributor.author | Lee, Seung-Hwan | - |
dc.contributor.author | Park, Jozeph | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.date.accessioned | 2021-08-02T16:28:53Z | - |
dc.date.available | 2021-08-02T16:28:53Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2016-08 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/22268 | - |
dc.description.abstract | Indium oxide (InOx) films are grown by atomic layer deposition (ALD) using [1,1,1-trimethyl-N-(trimethylsilyl)silanaminato]-indium (InCA-1) as the metal precursor and hydrogen peroxide (H₂O₂) as the oxidant. It is found that the electrical properties of the indium oxide layers strongly depend on the ALD growth temperature. Relatively low electrical resistivity (∼10⁻⁴ Ω cm) and high optical transparency (>85%) are obtained at growth temperatures higher than 200 °C, which make the indium oxide film suitable for transparent conducting oxide (TCO) applications. On the other hand, at relatively low growth temperatures below 150 °C, indium oxide behaves as a transparent semiconducting oxide (TSO). Thin film transistors (TFTs) incorporating this material as the active layer exhibit reasonably high performance with saturation mobility exceeding 10 cm² V⁻¹ s⁻¹ and a threshold voltage near 0 V. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Performance modulation of transparent ALD indium oxide films on flexible substrates: transition between metal-like conductor and high performance semiconductor states | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1039/c6tc01199c | - |
dc.identifier.scopusid | 2-s2.0-84982129810 | - |
dc.identifier.wosid | 000381435900007 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY C, v.4, no.32, pp.7571 - 7576 | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.volume | 4 | - |
dc.citation.number | 32 | - |
dc.citation.startPage | 7571 | - |
dc.citation.endPage | 7576 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | PRECURSOR | - |
dc.subject.keywordPlus | SILICA | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | EPITAXY | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2016/TC/C6TC01199C | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.