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Cited 13 time in webofscience Cited 14 time in scopus
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Colossal Terahertz Nonlinearity in Angstrom- and Nanometer-Sized Gaps

Authors
Han, SanghoonKim, Joon-YeonKang, TaeheeBahk, Young-MiRhie, JiyeahKang, Bong JooKim, Yong SeungPark, JoohyunKim, Won TaeJeon, HyeongtagRoterrnund, FabianKim, Dai-Sik
Issue Date
Aug-2016
Publisher
AMER CHEMICAL SOC
Keywords
terahertz nonlinearity; quantum tunneling; angstrom gap; metal-insulator-metal; graphene; aluminum oxide
Citation
ACS PHOTONICS, v.3, no.8, pp.1440 - 1445
Indexed
SCIE
SCOPUS
Journal Title
ACS PHOTONICS
Volume
3
Number
8
Start Page
1440
End Page
1445
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/22277
DOI
10.1021/acsphotonics.6b00103
ISSN
2330-4022
Abstract
We investigated optical nonlinearity induced by electron tunneling through an insulating vertical gap between metals, both at terahertz frequency and at near-infrared frequency. We adopted graphene and alumina layers as gap materials to form gap widths of 3 angstrom and 1.5 nm, respectively. Transmission measurements show that tunneling-induced transmittance changes from strong fields at the gaps can be observed with relatively weak incident fields at terahertz frequency due to high field enhancement, whereas nonlinearity at the near-infrared frequency is restricted by laser-induced metal damages. Even when the same level of tunneling currents occurs at both frequencies, transmittance in the terahertz regime decreases much faster than that in the near-infrared regime. An equivalent circuit model regarding the tunneling as a resistance component reveals that strong terahertz nonlinearity is due to much smaller displacement currents relative to tunneling currents, also explaining small nonlinearity of the near-infrared regime with orders of magnitude larger displacement currents.
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