Cited 135 time in
High-Performance 2D Rhenium Disulfide (ReS₂) Transistors and Photodetectors by Oxygen Plasma Treatment
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Shim, Jaewoo | - |
| dc.contributor.author | Oh, Aely | - |
| dc.contributor.author | Kang, Dong-Ho | - |
| dc.contributor.author | Oh, Seyong | - |
| dc.contributor.author | Jang, Sung Kyu | - |
| dc.contributor.author | Jeon, Jaeho | - |
| dc.contributor.author | Jeon, Min Hwan | - |
| dc.contributor.author | Kim, Minwoo | - |
| dc.contributor.author | Choi, Changhwan | - |
| dc.contributor.author | Lee, Jaehyeong | - |
| dc.contributor.author | Lee, Sungjoo | - |
| dc.contributor.author | Yeom, Geun Young | - |
| dc.contributor.author | Song, Young Jae | - |
| dc.contributor.author | Park, Jin-Hong | - |
| dc.date.accessioned | 2021-08-02T16:29:22Z | - |
| dc.date.available | 2021-08-02T16:29:22Z | - |
| dc.date.issued | 2016-08 | - |
| dc.identifier.issn | 0935-9648 | - |
| dc.identifier.issn | 1521-4095 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/22290 | - |
| dc.description.abstract | A high-performance ReS₂-based thin-film transistor and photodetector with high on/off-current ratio (10⁴), high mobility (7.6 cm² V⁻¹ s⁻¹), high photoresponsivity (2.5 x 10⁷ A W⁻¹), and fast temporal response (rising and decaying time of 670 ms and 5.6 s, respectively) through O₂ plasma treatment is reported. | - |
| dc.format.extent | 8 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
| dc.title | High-Performance 2D Rhenium Disulfide (ReS₂) Transistors and Photodetectors by Oxygen Plasma Treatment | - |
| dc.title.alternative | High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment | - |
| dc.type | Article | - |
| dc.publisher.location | 독일 | - |
| dc.identifier.doi | 10.1002/adma.201601002 | - |
| dc.identifier.scopusid | 2-s2.0-84982217614 | - |
| dc.identifier.wosid | 000382482500024 | - |
| dc.identifier.bibliographicCitation | Advanced Materials, v.28, no.32, pp 6985 - 6992 | - |
| dc.citation.title | Advanced Materials | - |
| dc.citation.volume | 28 | - |
| dc.citation.number | 32 | - |
| dc.citation.startPage | 6985 | - |
| dc.citation.endPage | 6992 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
| dc.subject.keywordPlus | TRANSITION-METAL DICHALCOGENIDES | - |
| dc.subject.keywordPlus | MOS2 TRANSISTORS | - |
| dc.subject.keywordPlus | MONOLAYER MOS2 | - |
| dc.subject.keywordPlus | HIGH-MOBILITY | - |
| dc.subject.keywordPlus | PHOSPHORUS | - |
| dc.subject.keywordPlus | DEVICES | - |
| dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
| dc.subject.keywordPlus | PHOTOTRANSISTORS | - |
| dc.subject.keywordPlus | NANOSHEETS | - |
| dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/adma.201601002 | - |
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