Engineering the crystallinity of tin disulfide deposited at low temperatures
DC Field | Value | Language |
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dc.contributor.author | Ham, Giyul | - |
dc.contributor.author | Shin, Seokyoon | - |
dc.contributor.author | Park, Joohyun | - |
dc.contributor.author | Lee, Juhyun | - |
dc.contributor.author | Choi, Hyeongsu | - |
dc.contributor.author | Lee, Seungjin | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.date.accessioned | 2021-08-02T16:51:48Z | - |
dc.date.available | 2021-08-02T16:51:48Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2016-06 | - |
dc.identifier.issn | 2046-2069 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/22990 | - |
dc.description.abstract | Tin disulfide (SnS₂), which exhibits a two-dimensional (2D) layered structure, is considered to be a promising channel material for thin film transistors because of its high electrical performance and low temperature processibility. In this work, we deposited crystalline SnS₂ at 150 °C using atomic layer deposition (ALD) which is compatible with current electronic device processing methods. And then, crystalline SnS₂ films were annealed to investigate the change in crystallinity. We carried out sulfur annealing of the SnS₂ films at temperatures of 250, 300 and 350 °C. The effects of sulfur annealing were investigated in a mixed gas atmosphere of 100 sccm argon (Ar) and 5 sccm hydrogen (H₂). SnS₂ samples were examined using XRD, TEM, XPS, UV-vis and PL. The crystallinity of the SnS₂ films after annealing was improved, and its grain size became larger compared with the as-deposited SnS₂ film. We also observed a clear two dimensional layered structure of SnS₂ using high resolution TEM. The change in the optical properties of the SnS₂ films was observed using UV-vis and PL. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Engineering the crystallinity of tin disulfide deposited at low temperatures | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.1039/c6ra08169j | - |
dc.identifier.scopusid | 2-s2.0-84973659684 | - |
dc.identifier.wosid | 000378521400056 | - |
dc.identifier.bibliographicCitation | RSC ADVANCES, v.6, no.59, pp.54069 - 54075 | - |
dc.relation.isPartOf | RSC ADVANCES | - |
dc.citation.title | RSC ADVANCES | - |
dc.citation.volume | 6 | - |
dc.citation.number | 59 | - |
dc.citation.startPage | 54069 | - |
dc.citation.endPage | 54075 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.subject.keywordPlus | SNS2 | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordPlus | GROWTH | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2016/RA/C6RA08169J | - |
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