Engineering the crystallinity of tin disulfide deposited at low temperatures
- Authors
- Ham, Giyul; Shin, Seokyoon; Park, Joohyun; Lee, Juhyun; Choi, Hyeongsu; Lee, Seungjin; Jeon, Hyeongtag
- Issue Date
- Jun-2016
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- RSC ADVANCES, v.6, no.59, pp.54069 - 54075
- Indexed
- SCIE
SCOPUS
- Journal Title
- RSC ADVANCES
- Volume
- 6
- Number
- 59
- Start Page
- 54069
- End Page
- 54075
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/22990
- DOI
- 10.1039/c6ra08169j
- ISSN
- 2046-2069
- Abstract
- Tin disulfide (SnS₂), which exhibits a two-dimensional (2D) layered structure, is considered to be a promising channel material for thin film transistors because of its high electrical performance and low temperature processibility. In this work, we deposited crystalline SnS₂ at 150 °C using atomic layer deposition (ALD) which is compatible with current electronic device processing methods. And then, crystalline SnS₂ films were annealed to investigate the change in crystallinity. We carried out sulfur annealing of the SnS₂ films at temperatures of 250, 300 and 350 °C. The effects of sulfur annealing were investigated in a mixed gas atmosphere of 100 sccm argon (Ar) and 5 sccm hydrogen (H₂). SnS₂ samples were examined using XRD, TEM, XPS, UV-vis and PL. The crystallinity of the SnS₂ films after annealing was improved, and its grain size became larger compared with the as-deposited SnS₂ film. We also observed a clear two dimensional layered structure of SnS₂ using high resolution TEM. The change in the optical properties of the SnS₂ films was observed using UV-vis and PL.
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