Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Ha-Jin | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.contributor.author | Kwon, Se-Hun | - |
dc.date.accessioned | 2021-08-02T16:52:10Z | - |
dc.date.available | 2021-08-02T16:52:10Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2016-06 | - |
dc.identifier.issn | 1385-3449 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/23013 | - |
dc.description.abstract | Plasma-enhanced atomic layer deposition (PEALD) of tantalum nitride (TaN) thin films was investigated at a growth temperature of 230 A degrees C using an alternating supply of tertiary-amylimido-tris(dimethylamido)tantalum (TAIMATA, Ta[NC(CH3)(2)C2H5][N(CH3)(2)](3)) and hydrogen (H-2) plasma. As the H-2 plasma power increased from 75 to 175 W, the electrical resistivity of the films was improved from 1900 to 680 mu a"broken vertical bar center dot cm, mainly due to the improved crystallinity. Moreover, the preferred orientation ratio between TaN (200) and TaN (111) planes also abruptly increased from 0.8 to 2.8 with increasing the H-2 plasma power. This preferred orientation change of the films from (111) to (200) improves the adhesion properties between Cu and TaN, while the Cu diffusion barrier performance was not significantly affected. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.title | Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1007/s10832-016-0015-4 | - |
dc.identifier.scopusid | 2-s2.0-84959136905 | - |
dc.identifier.wosid | 000379164700024 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ELECTROCERAMICS, v.36, no.1-4, pp.165 - 169 | - |
dc.relation.isPartOf | JOURNAL OF ELECTROCERAMICS | - |
dc.citation.title | JOURNAL OF ELECTROCERAMICS | - |
dc.citation.volume | 36 | - |
dc.citation.number | 1-4 | - |
dc.citation.startPage | 165 | - |
dc.citation.endPage | 169 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.subject.keywordPlus | COPPER DIFFUSION BARRIER | - |
dc.subject.keywordPlus | TAN | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | METALLIZATION | - |
dc.subject.keywordPlus | CU | - |
dc.subject.keywordAuthor | Tantalum nitride thin films | - |
dc.subject.keywordAuthor | Plasma-enhanced atomic layer deposition | - |
dc.subject.keywordAuthor | Preferred orientation | - |
dc.subject.keywordAuthor | Microstructure | - |
dc.subject.keywordAuthor | Copper diffusion barrier | - |
dc.identifier.url | https://link.springer.com/article/10.1007/s10832-016-0015-4 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.