Band engineering in a van der Waals heterostructure using a 2D polar material and a capping layer

Abstract

Van der Waals (vdW) heterostructures are expected to play a key role in next-generation electronic and optoelectronic devices. In this study, the band alignment of a vdW heterostructure with 2D polar materials was studied using first-principles calculations. As a model case study, singlesided fluorographene (a 2D polar material) on insulating (h-BN) and metallic (graphite) substrates was investigated to understand the band alignment behavior of polar materials. Single-sided fluorographene was found to have a potential difference along the out-of-plane direction. This potential difference provided as built-in potential at the interface, which shift the band alignment between h-BN and graphite. The interface characteristics were highly dependent on the interface terminations because of this built-in potential. Interestingly, this band alignment can be modified with a capping layer of graphene or BN because the capping layer triggered electronic reconstruction near the interface. This is because the bonding nature is not covalent, but van der Waals, which made it possible to avoid Fermi-level pinning at the interface. The results of this study showed that diverse types of band alignment can be achieved using polar materials and an appropriate capping layer.