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A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique
- Authors
- Jo, Seo-Hyeon; Kang, Dong-Ho; Shim, Jaewoo; Jeon, Jaeho; Jeon, Min Hwan; Yoo, Gwangwe; Kim, Jinok; Lee, Jaehyeong; Yeom, Geun Young; Lee, Sungjoo; Yu, Hyun-Yong; Choi, Changhwan; Park, Jin-Hong
- Issue Date
- Jun-2016
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- nondegenerate doping; photodetectors; PPh3; type-converted FET; WSe2
- Citation
- ADVANCED MATERIALS, v.28, no.24, pp.4824 - 4831
- Indexed
- SCIE
SCOPUS
- Journal Title
- ADVANCED MATERIALS
- Volume
- 28
- Number
- 24
- Start Page
- 4824
- End Page
- 4831
- ISSN
- 0935-9648
- Abstract
- The effects of triphenylphosphine (PPh3)-based n-doping and hexagonal boron nitride (h-BN) insertion on a tungsten diselenide (WSe2) photodetector are systematically studied, and a very high performance WSe2/h-BN heterostucture-based photodetector is demonstrated with a record photoresponsivity (1.27 x 10⁶ A W-1) and temporal photoresponse (rise time: 2.8 ms, decay time: 20.8 ms) under 520 nm wavelength and 5 pW power laser illumination.
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)