Versatile p‐Type Chemical Doping to Achieve Ideal Flexible Graphene Electrodes
- Authors
- Han, Tae Hee; Kwon, Sung-Joo; Li, Nannan; Seo, Hong-Kyu; Xu, Wentao; Kim, Kwang S.; Lee, Tae-Woo
- Issue Date
- May-2016
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- chemical doping; flexible OLEDs; graphene; transparent electrodes
- Citation
- ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, v.55, no.21, pp.6197 - 6201
- Indexed
- SCIE
SCOPUS
- Journal Title
- ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
- Volume
- 55
- Number
- 21
- Start Page
- 6197
- End Page
- 6201
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/23070
- DOI
- 10.1002/anie.201600414
- ISSN
- 1433-7851
- Abstract
- We report effective solution-processed chemical p-type doping of graphene using trifluoromethanesulfonic acid (CF3SO3H, TFMS), that can provide essential requirements to approach an ideal flexible graphene anode for practical applications: i) high optical transmittance, ii) low sheet resistance (70% decrease), iii) high work function (0.83 eV increase), iv) smooth surface, and iv) air-stability at the same time. The TFMS-doped graphene formed nearly ohmic contact with a conventional organic hole transporting layer, and a green phosphorescent organic light-emitting diode with the TFMS-doped graphene anode showed lower operating voltage, and higher device efficiencies (104.1 cd A(-1), 80.7 lm W-1) than those with conventional ITO (84.8 cd A(-1), 73.8 lm W-1).
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