FinFETs With a Deep Buried Channel to Reduce the Readout Noise in CMOS Image Sensors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ryu, Ju Tae | - |
dc.contributor.author | Jeon, Seong Bae | - |
dc.contributor.author | Koh, Hyun Seung | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2021-08-02T16:53:25Z | - |
dc.date.available | 2021-08-02T16:53:25Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2016-05 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/23106 | - |
dc.description.abstract | FinFETs with a deep buried channel (DBC) are proposed for the reduction of readout noise in complementary metal-oxide-semiconductor image sensors (CISs). Simulation results show that the influence of defects at the Si/SiO2 interface on the drain current is reduced for the DBC design as the drain current variation in DBC FinFETs is 50% smaller than those in surface-and buried-channel metal-oxide-semiconductor field-effect transistor. The potential barriers at the fin sidewalls serve to confine electrons away from the defects at the Si/SiO2 interface, resulting in decreased readout noise in the CIS. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | FinFETs With a Deep Buried Channel to Reduce the Readout Noise in CMOS Image Sensors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1109/LED.2016.2541778 | - |
dc.identifier.scopusid | 2-s2.0-84964636382 | - |
dc.identifier.wosid | 000374868300001 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.37, no.5, pp.530 - 532 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 37 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 530 | - |
dc.citation.endPage | 532 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | LEAKAGE | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | PIXEL | - |
dc.subject.keywordAuthor | Random telegraph noise | - |
dc.subject.keywordAuthor | FinFET | - |
dc.subject.keywordAuthor | CMOS image sensor | - |
dc.subject.keywordAuthor | oxide trap | - |
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