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Molecular dynamics simulations of the coupled effects of strain and temperature on displacement cascades in alpha-zirconiumopen access

Authors
Sahi, Qurat u lainKim, Yong Soo
Issue Date
Aug-2018
Publisher
KOREAN NUCLEAR SOC
Keywords
Defect Clusters; Displacement Cascade; Molecular Dynamics; Primary Defect Formation; Strain Effects; Temperature Effects
Citation
NUCLEAR ENGINEERING AND TECHNOLOGY, v.50, no.6, pp.907 - 914
Indexed
SCIE
SCOPUS
KCI
Journal Title
NUCLEAR ENGINEERING AND TECHNOLOGY
Volume
50
Number
6
Start Page
907
End Page
914
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2317
DOI
10.1016/j.net.2018.04.013
ISSN
1738-5733
Abstract
In this article, we conducted molecular dynamics simulations to investigate the effect of applied strain and temperature on irradiation-induced damage in alpha-zirconium. Cascade simulations were performed with primary knock-on atom energies ranging between 1 and 20 KeV, hydrostatic and uniaxial strain values ranging from -2% (compression) to 2% (tensile), and temperatures ranging from 100 to 1000 K. Results demonstrated that the number of defects increased when the displacement cascade proceeded under tensile uniaxial hydrostatic strain. In contrast, compressive strain states tended to decrease the defect production rate as compared with the reference no-strain condition. The proportions of vacancy and interstitial clustering increased by approximately 45% and 55% and 25% and 32% for 2% hydrostatic and uniaxial strain systems, respectively, as compared with the unstrained system, whereas both strain fields resulted in a 15-30% decrease in vacancy and interstitial clustering under compressive conditions. Tensile strains, specifically hydrostatic strain, tended to produce larger sized vacancy and interstitial clusters, whereas compressive strain systems did not significantly affect the size of defect clusters as compared with the reference no-strain condition. The influence of the strain system on radiation damage became more significant at lower temperatures because of less annealing than in higher temperature systems.
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