Effect of Mg insertion on stress-induced resistance drift in MgO-based magnetic tunnel junctions
- Authors
- Choi, Chul Min; Oh, Young Taek; Lee, Jeong Yong; Sukegawa, Hiroaki; Mitani, Seiji; Song, Yun Heub
- Issue Date
- Apr-2016
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- Citation
- ELECTRONICS LETTERS, v.52, no.7, pp.531 - 532
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTRONICS LETTERS
- Volume
- 52
- Number
- 7
- Start Page
- 531
- End Page
- 532
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/23212
- DOI
- 10.1049/el.2015.4299
- ISSN
- 0013-5194
- Abstract
- The stress-induced resistance drift in MgO-based magnetic tunnel junctions (MTJs) with Mg insertion layer above and below a MgO tunnel barrier is investigated. Mg insertion suppresses the resistance drift. Resistance drift characteristics are improved when electrons tunnel into the Mg-inserted barrier-electrode interface, indicating that Mg insertion significantly suppresses trap site formation at the anode-side barrier-electrode interface. However, transmission electron microscopy images confirm that there is little difference in interface crystallinity between the Mg-inserted and non-inserted interfaces. Therefore, it is shown that a slight modification of the barrier-electrode interface states has a significant impact on resistance drift characteristics, and Mg insertion on both interface sides appears to be an effective way to improve MTJ device reliability in practical applications.
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