Metal-induced crystallization of amorphous zinc tin oxide semiconductors for high mobility thin-film transistors
DC Field | Value | Language |
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dc.contributor.author | Hwang, Ah Young | - |
dc.contributor.author | Kim, Sang Tae | - |
dc.contributor.author | Ji, Hyuk | - |
dc.contributor.author | Shin, Yeonwoo | - |
dc.contributor.author | Jeong, Jae Kyeong | - |
dc.date.accessioned | 2021-08-02T17:26:08Z | - |
dc.date.available | 2021-08-02T17:26:08Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2016-04 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/23828 | - |
dc.description.abstract | Transition tantalum induced crystallization of amorphous zinc tin oxide (a-ZTO) was observed at low temperature annealing of 300 degrees C. Thin-film transistors (TFTs) with an a-ZTO channel layer exhibited a reasonable field-effect mobility of 12.4 cm(2)/Vs, subthreshold swing (SS) of 0.39V/decade, threshold voltage (V-TH) of 1.5 V, and I-ON/OFF ratio of similar to 10(7). A significant improvement in the field-effect mobility (up to similar to 33.5 cm(2)/V s) was achieved for crystallized ZTO TFTs: this improvement was accomplished without compromising the SS, V-TH, or I-ON/OFF ratio due to the presence of a highly ordered microstructure. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Metal-induced crystallization of amorphous zinc tin oxide semiconductors for high mobility thin-film transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Jae Kyeong | - |
dc.identifier.doi | 10.1063/1.4947063 | - |
dc.identifier.scopusid | 2-s2.0-84964494888 | - |
dc.identifier.wosid | 000374314000027 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.108, no.15, pp.1 - 5 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 108 | - |
dc.citation.number | 15 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 5 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.4947063 | - |
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