Li-Assisted Low-Temperature Phase Transitions in Solution-Processed Indium Oxide Films for High-Performance Thin Film Transistor
DC Field | Value | Language |
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dc.contributor.author | Manh-Cuong Nguyen | - |
dc.contributor.author | Jang, Mi | - |
dc.contributor.author | Lee, Dong-Hwi | - |
dc.contributor.author | Bang, Hyun-Jun | - |
dc.contributor.author | Lee, Minjung | - |
dc.contributor.author | Jeong, Jae Kyeong | - |
dc.contributor.author | Yang, Hoichang | - |
dc.contributor.author | Choi, Rino | - |
dc.date.accessioned | 2021-08-02T17:26:26Z | - |
dc.date.available | 2021-08-02T17:26:26Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2016-04 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/23841 | - |
dc.description.abstract | Lithium (Li)-assisted indium oxide (In2O3) thin films with ordered structures were prepared on solution-processed zirconium oxide (ZrO2) gate dielectrics by spin-casting and thermally annealing hydrated indium nitrate solutions with different Li nitrate loadings. It was found that the Li-assisted In precursor films on ZrO2 dielectrics could form crystalline structures even at processing temperatures (T) below 200 degrees C. Different In oxidation states were observed in the Li-doped films, and the development of such states was significantly affected by both temperature and the mol% of Li cations, [Li+]/([In3+] + [Li+]), in the precursor solutions. Upon annealing the Li-assisted precursor films below 200 degrees C, metastable indium hydroxide and/or indium oxyhydroxide phases were formed. These phases were subsequently transformed into crystalline (InO3)-O-2 nanostructures after thermal dehydration and oxidation. Finally, an In2O3 film doped with 13.5 mol% Li+ and annealed at 250 degrees C for 1 h exhibited the highest electron mobility of 60 cm(2) V-1 s(-1) and an on/off current ratio above 10(8) when utilized in a thin film transistor. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | Li-Assisted Low-Temperature Phase Transitions in Solution-Processed Indium Oxide Films for High-Performance Thin Film Transistor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Jae Kyeong | - |
dc.identifier.doi | 10.1038/srep25079 | - |
dc.identifier.scopusid | 2-s2.0-84964831655 | - |
dc.identifier.wosid | 000374935700001 | - |
dc.identifier.bibliographicCitation | SCIENTIFIC REPORTS, v.6, pp.1 - 13 | - |
dc.relation.isPartOf | SCIENTIFIC REPORTS | - |
dc.citation.title | SCIENTIFIC REPORTS | - |
dc.citation.volume | 6 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 13 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.subject.keywordPlus | DOPED ZNO TRANSISTORS | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | LOW-VOLTAGE | - |
dc.identifier.url | https://www.nature.com/articles/srep25079 | - |
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