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Dynamics of Threshold Voltage Instability in IGZO TFTs: Impact of High Pressurized Oxygen Treatment on the Activation Energy Barrier
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Song, Ji Hun | - |
| dc.contributor.author | Oh, Nuri | - |
| dc.contributor.author | Anh, Byung Du | - |
| dc.contributor.author | Kim, Hye Dong | - |
| dc.contributor.author | Jeong, Jae Kyeong | - |
| dc.date.accessioned | 2021-08-02T17:27:29Z | - |
| dc.date.available | 2021-08-02T17:27:29Z | - |
| dc.date.issued | 2016-03 | - |
| dc.identifier.issn | 0018-9383 | - |
| dc.identifier.issn | 1557-9646 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/23913 | - |
| dc.description.abstract | The effect of oxygen high pressurized treatment (OHPT) on the gate-bias thermal stress (BTS) instability of amorphous indium-gallium-zinc-oxide (IGZO) TFTs was investigated. OHPT at 10 atm and 300 degrees C produces TFTs with better reliability under the positive/negative BTS conditions, which can be attributed to the reduction in the oxygen vacancy defect. However, OHPT at a higher pressure (15 atm) deteriorated the BTS-induced stability of the IGZO TFTs. The rationale for this strong OHPT dependence on the BTS instability of IGZO TFTs was discussed based on the single-frame oxygen-related defect model. | - |
| dc.format.extent | 5 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Institute of Electrical and Electronics Engineers | - |
| dc.title | Dynamics of Threshold Voltage Instability in IGZO TFTs: Impact of High Pressurized Oxygen Treatment on the Activation Energy Barrier | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1109/TED.2015.2511883 | - |
| dc.identifier.scopusid | 2-s2.0-84957639557 | - |
| dc.identifier.wosid | 000372356900022 | - |
| dc.identifier.bibliographicCitation | IEEE Transactions on Electron Devices, v.63, no.3, pp 1054 - 1058 | - |
| dc.citation.title | IEEE Transactions on Electron Devices | - |
| dc.citation.volume | 63 | - |
| dc.citation.number | 3 | - |
| dc.citation.startPage | 1054 | - |
| dc.citation.endPage | 1058 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
| dc.subject.keywordAuthor | Amorphous indium-gallium-zinc-oxide (a-IGZO) | - |
| dc.subject.keywordAuthor | instability | - |
| dc.subject.keywordAuthor | interstitial oxygen | - |
| dc.subject.keywordAuthor | oxygen vacancy | - |
| dc.subject.keywordAuthor | TFT | - |
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)