Transport property improvements of amorphous In-Zn-O transistors with printed Cu contacts via rapid temperature annealing
DC Field | Value | Language |
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dc.contributor.author | Won, Ju Yeon | - |
dc.contributor.author | Han, Young Hun | - |
dc.contributor.author | Seol, Hyun Ju | - |
dc.contributor.author | Lee, Ki June | - |
dc.contributor.author | Choi, Rino | - |
dc.contributor.author | Jeong, Jae Kyeong | - |
dc.date.accessioned | 2021-08-02T17:30:18Z | - |
dc.date.available | 2021-08-02T17:30:18Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2016-03 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/23937 | - |
dc.description.abstract | The device performance of amorphous In-Zn-O (a-IZO) thin-film transistors (TFTs) with printed Cu contacts was significantly improved by the insertion of a diffusion barrier Ta layer and rapid thermal process (RTP) annealing. Furnace-annealed a-IZO TFTs with Cu/Ta contacts exhibited mobility values of 21.3 cm(2)/Vs, subthreshold gate swing (SS) values of 1.9 V/decade, and I-ON/OFF of similar to 10(6). In contrast, the SS, mobility, and I-ON/OFF ratio of RTP-annealed a-IZO TFTs with Cu/Ta contacts were 30.6 cm(2)/Vs, 0.68 V/decade, and 3 x 10(7), respectively. We attributed the performance improvement of devices with Cu/Ta contacts to the suppression of Cu in-diffusion within the a-IZO channel due to the rapid heating associated with RTP annealing. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Transport property improvements of amorphous In-Zn-O transistors with printed Cu contacts via rapid temperature annealing | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Jae Kyeong | - |
dc.identifier.doi | 10.1016/j.tsf.2016.02.032 | - |
dc.identifier.scopusid | 2-s2.0-84962433179 | - |
dc.identifier.wosid | 000372794900042 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.603, pp.268 - 271 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 603 | - |
dc.citation.startPage | 268 | - |
dc.citation.endPage | 271 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordAuthor | Printed contacts | - |
dc.subject.keywordAuthor | Copper | - |
dc.subject.keywordAuthor | Rapid temperature annealing | - |
dc.subject.keywordAuthor | Indium-zinc-oxide | - |
dc.subject.keywordAuthor | Semiconductor | - |
dc.subject.keywordAuthor | Tantalum | - |
dc.subject.keywordAuthor | Diffusion barrier | - |
dc.subject.keywordAuthor | Thin-film transistors | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0040609016001309?via%3Dihub | - |
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