Reliability Degeneration Mechanisms of the 20-nm Flash Memories Due to the Word Line Stress
DC Field | Value | Language |
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dc.contributor.author | Jung, Hyun Soo | - |
dc.contributor.author | Ryu, Ju Tae | - |
dc.contributor.author | Yoo, Keon-Ho | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2021-08-02T17:31:22Z | - |
dc.date.available | 2021-08-02T17:31:22Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2016-02 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/24014 | - |
dc.description.abstract | The electrical characteristics of NAND flash memories with a high-k dielectric layer were simulated by using a full three-dimensional technology computer-aided design simulator. The occurrence rate of the errors in the flash memories increases with increasing program/erase cycles. To verify the word line stress effect, electron density in the floating gate of target cell and non-target cell, the drain current in the channel of non-target cell and depletion region of the non-target cell were simulated as a function of program/erase cycle, for various floating gate thicknesses. The electron density in the floating gate became decreased with increasing program/erase cycles. The reliability degradation occured by the increased depletion region at the bottom of the polysilicon floating gate in the continued program/erase cycle situation due to the word line stress. The degradation mechanisms for the program characteristics of 20-nm NAND flash memories were clarified by examining electron density, darin current and depletion region. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Reliability Degeneration Mechanisms of the 20-nm Flash Memories Due to the Word Line Stress | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1166/jnn.2016.11950 | - |
dc.identifier.scopusid | 2-s2.0-84959422751 | - |
dc.identifier.wosid | 000372358800071 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.2, pp.1669 - 1671 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 16 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 1669 | - |
dc.citation.endPage | 1671 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | RETENTION CHARACTERISTICS | - |
dc.subject.keywordPlus | CELL | - |
dc.subject.keywordAuthor | NAND Flash Memory | - |
dc.subject.keywordAuthor | Word Line Stress | - |
dc.subject.keywordAuthor | Degeneration Mechanism | - |
dc.subject.keywordAuthor | Program/Erase Cycle | - |
dc.identifier.url | https://www.ingentaconnect.com/content/asp/jnn/2016/00000016/00000002/art00072 | - |
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