Intense pulsed light induced crystallization of a liquid-crystalline polymer semiconductor for efficient production of flexible thin-film transistors
- Authors
- Yang, Hee Yeon; Park, Han-Wool; Kim, Soo Jin; Hong, Jae-Min; Kim, Tae Whan; Kim, Do Hwan; Lim, Jung Ah
- Issue Date
- Feb-2016
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.18, no.6, pp.4627 - 4634
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Volume
- 18
- Number
- 6
- Start Page
- 4627
- End Page
- 4634
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/24040
- DOI
- 10.1039/c5cp06989k
- ISSN
- 1463-9076
- Abstract
- Here we demonstrated the split-second crystallization of a liquid-crystalline conjugated polymer semiconductor induced by irradiation with intense pulsed white light (IPWL) for the efficient improvement of electrical properties of flexible thin film transistors. A few seconds of IPWL irradiation of poly(didodecylquaterthiophene-alt-didodecylbithiazole) (PQTBTz-C12) thin films generated heat energy through the photo-thermal effect, leading to the crystallization of PQTBTz-C12 and formation of nodule-like nanostructures. The IPWL-induced crystallization of PQTBTz-C12 resulted in a threefold improvement in the field-effect mobility of thin film transistors compared to as-prepared devices. The conformational change of the PQTBTz-C12 chains was found to be strongly related to the irradiation fluence. As a proof-of-concept, the IPWL treatment was successfully applied to the PQTBTz-C12 layer in flexible transistors based on plastic substrates. The performance of these flexible devices was significantly improved after only 0.6 s of IPWL treatment, without deformation of the plastic substrate.
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