Fast spatial atomic layer deposition of Al₂O₃ at low temperature (<100 °c) as a gas permeation barrier for flexible organic light-emitting diode display
DC Field | Value | Language |
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dc.contributor.author | Choi, Hagyoung | - |
dc.contributor.author | Shin, Seokyoon | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.contributor.author | Choi, Yeongtae | - |
dc.contributor.author | Kim, Junghun | - |
dc.contributor.author | Kim, Sanghun | - |
dc.contributor.author | Chung, Seog Chul | - |
dc.contributor.author | Oh, Kiyoung | - |
dc.date.accessioned | 2021-08-02T17:36:21Z | - |
dc.date.available | 2021-08-02T17:36:21Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2016-01 | - |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/24101 | - |
dc.description.abstract | The authors developed a high throughput (70 Å/min) and scalable space-divided atomic layer deposition (ALD) system for thin film encapsulation (TFE) of flexible organic light-emitting diode (OLED) displays at low temperatures (<100 °C). In this paper, the authors report the excellent moisture barrier properties of Al₂O₃ films deposited on 2G glass substrates of an industrially relevant size (370 × 470 mm²) using the newly developed ALD system. This new ALD system reduced the ALD cycle time to less than 1 s. A growth rate of 0.9 Å/cycle was achieved using trimethylaluminum as an Al source and O3 as an O reactant. The morphological features and step coverage of the Al₂O₃ films were investigated using field emission scanning electron microscopy. The chemical composition was analyzed using Auger electron spectroscopy. These deposited Al₂O₃ films demonstrated a good optical transmittance higher than 95% in the visible region based on the ultraviolet visible spectrometer measurements. Water vapor transmission rate lower than the detection limit of the MOCON test (less than 3.0 × 10⁻³ g/m² day) were obtained for the flexible substrates. Based on these results, Al₂O₃ deposited using our new high-throughput and scalable spatial ALD is considered a good candidate for preparation of TFE films of flexible OLEDs. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.title | Fast spatial atomic layer deposition of Al₂O₃ at low temperature (<100 °c) as a gas permeation barrier for flexible organic light-emitting diode display | - |
dc.title.alternative | Fast spatial atomic layer deposition of Al2O3 at low temperature (< 100 degrees C) as a gas permeation barrier for flexible organic light-emitting diode displays | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.1116/1.4934752 | - |
dc.identifier.scopusid | 2-s2.0-84947983011 | - |
dc.identifier.wosid | 000375115800022 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.34, no.1, pp.1 - 7 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.citation.volume | 34 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | SURFACE-CHEMISTRY | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | PLASMA | - |
dc.identifier.url | https://avs.scitation.org/doi/10.1116/1.4934752 | - |
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