Solution processed growth and photoelectrochemistry of Bi₂S₃ nanorods thin film

Abstract

Bismuth sulfide (Bi₂S₃) belongs to a family of metal chalcogenides in a class of non-toxic semiconductor materials, whose importance in photovoltaic and thermoelectric applications is well recognized. We have successfully prepared crystalline Bi₂S₃ nanorod (NR) thin films from a solution of bismuth chloride and thioacetamide via a solution process method. A possible mechanism for the growth process of the Bi₂S₃ NRs is proposed. Prepared Bi₂S₃ NR films characterized via X-ray diffraction (XRD), energy dispersive analysis (EDX), field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), brunauer-emmett-teller (BET) surface area, and photoelectrochemical cells are studied. The morphology of the Bi₂S₃ NR reveals a photocurrent density of 0.20 mA/cm(2) at 0 V bias condition under 1 sun illumination. The charge transport properties of the Bi₂S₃ NRs are studied via impedance spectroscopy analysis. This preparation method is economical for scale-up processes, and can also applied to the preparation of other metal sulfide semiconductors.