Ultraviolet photodetectors using hollow p-CuO nanospheres/n-ZnO nanorods with a pn junction structure
- Authors
- Ji, Yuexing; Jung, Uijin; Xian, Zhanpeng; Kim, Dohyun; Yu, Jiyeon; Park, Jinsub
- Issue Date
- Apr-2020
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- UV detector; Hollow CuO; ZnO; Transfer of spheres monolayer
- Citation
- SENSORS AND ACTUATORS A-PHYSICAL, v.304, pp.1 - 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- SENSORS AND ACTUATORS A-PHYSICAL
- Volume
- 304
- Start Page
- 1
- End Page
- 7
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2590
- DOI
- 10.1016/j.sna.2020.111876
- ISSN
- 0924-4247
- Abstract
- We report on ultraviolet (UV) photodetectors with a pn junction structure consisting of hollow p-CuO (h-CuO) nanospheres and n-ZnO nanorods (NRs). To form the pn junction structure, thermal annealing was conducted using a transferred monolayer of Cu-ion-incorporated polymer spheres onto the n-ZnO NRs/n-Si substrate. Device performance was evaluated by comparing the effects of h-CuO nanosphere coverage changed by sphere shrinkage during thermal annealing of Cu-ion-incorporated polymer spheres. Three samples were prepared by varying the transfer times of h-CuO on ZnO NRs: 0 times (Reference), 1 time (CZ-I), and 2 times (CZ-II). The CZ-II-based UV detector shows a fast rising time of 1.8 s and a falling time of 0.26 s, which are faster rising by 2.2 and 1.3 times and faster falling by 3.1 and 32.6 times than those of the CZ-I and Reference UV detectors, respectively, under illumination with UV light at 254 nm. Moreover, the On/Off current ratio of the CZ-II UV detector is 4.58, which is about 3.3 times and 3.5 times higher than that of the CZ-I and Reference devices, respectively. The higher h-CuO coverage on the ZnO NRs that form the pn junction structure can effectively separate the electron and hole and suppress recombination by mutual transfer of photo-generated electrons and holes in the heterojunction.
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