Ultrathin electronic synapse having high temporal/spatial uniformity and an Al2O3/graphene quantum dots/Al2O3 sandwich structure for neuromorphic computingopen access
- Authors
- Xu, Zhongwei; Li, Fushan; Wu, Chaoxing; Ma, Fumin; Zheng, Yueting; Yang, Kaiyu; Chen, Wei; Hu, Hailong; Guo, Tailiang; KIM, TAE WHAN
- Issue Date
- Apr-2019
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- NPG ASIA MATERIALS, v.11, no.1, pp.1 - 10
- Indexed
- SCIE
SCOPUS
- Journal Title
- NPG ASIA MATERIALS
- Volume
- 11
- Number
- 1
- Start Page
- 1
- End Page
- 10
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2630
- DOI
- 10.1038/s41427-019-0118-x
- ISSN
- 1884-4049
- Abstract
- An electronic synapse (e-synapse) based on memristive switching is a promising electronic element that emulates a biological synapse to realize neuromorphic computing. However, the complex resistive switching process it relies on hampers the reproducibility of its performance. Thus, achievement of a reproducible electronic synapse with a high rate of finished products has become a significant challenge in the development of an artificial intelligent circuit. Here, we demonstrate an ultrathin e-synapse having high yield (>95%), minimal performance variation, and extremely low power consumption based on an Al2O3/graphene quantum dots/Al2O3 sandwich structure that was fabricated using atomic layer deposition. The e-synapse showed both high device-to-device and cycle-to-cycle reproducibility with high stability, endurance, and switching uniformity, because the essential synaptic behaviors could be observed. This implementation of an e-synapse with an Al2O3/graphene quantum dots/Al2O3 structure should intensify motivation for engineering e-synapses for neuromorphic computing.
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