Detailed Information
Cited 21 time in 
Cited 23 time in 
Cited 23 time in
Metadata Downloads
High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated by Atomic Layer Deposition
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Cho, Min Hoe | - |
| dc.contributor.author | Seol, Hyunju | - |
| dc.contributor.author | Yang, Hoichang | - |
| dc.contributor.author | Yun, Pil Sang | - |
| dc.contributor.author | Bae, Jong Uk | - |
| dc.contributor.author | Park, Kwon-Shik | - |
| dc.contributor.author | Jeong, Jae Kyeong | - |
| dc.date.accessioned | 2021-07-30T05:01:08Z | - |
| dc.date.available | 2021-07-30T05:01:08Z | - |
| dc.date.created | 2021-05-12 | - |
| dc.date.issued | 2018-05 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2710 | - |
| dc.description.abstract | This letter reports the fabrication of high-performance amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) via atomic layer deposition at a substrate temperature of 250 degrees C. The film thickness of In2O3, Ga2O3, and ZnO varied linearly with the number of deposition cycles. The cation composition of the IGZO film was controlledby an alternate stacking of In2O3, Ga2O3, and ZnO atomic layers. The fabricated a-IGZO TFTs exhibited a high electron mobility of 22.1 cm(2)/Vs, threshold voltage of 2.41 V, subthreshold gate swing of 0.30 V/decade, and an I-ON/(OFF) ratio of > 1 x 10(8). | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated by Atomic Layer Deposition | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Jeong, Jae Kyeong | - |
| dc.identifier.doi | 10.1109/LED.2018.2812870 | - |
| dc.identifier.scopusid | 2-s2.0-85043382124 | - |
| dc.identifier.wosid | 000432990700011 | - |
| dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.39, no.5, pp.688 - 691 | - |
| dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
| dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
| dc.citation.volume | 39 | - |
| dc.citation.number | 5 | - |
| dc.citation.startPage | 688 | - |
| dc.citation.endPage | 691 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Electrical & Electronic | - |
| dc.subject.keywordPlus | TEMPERATURE | - |
| dc.subject.keywordPlus | SEMICONDUCTORS | - |
| dc.subject.keywordAuthor | Atomic layer deposition | - |
| dc.subject.keywordAuthor | high mobility | - |
| dc.subject.keywordAuthor | a-IGZO | - |
| dc.subject.keywordAuthor | high performance | - |
| dc.subject.keywordAuthor | thin-film transistors | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/8307119 | - |
- Files in This Item
- Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)