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The Effects of NF3/NH3 Remote Plasma Dry Cleaning on the Electrical Characteristics of MOS Device on the Highly Trenched Si Substrate
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최창환 | - |
| dc.date.accessioned | 2021-08-02T19:03:17Z | - |
| dc.date.available | 2021-08-02T19:03:17Z | - |
| dc.date.issued | 2018-08-23 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/27256 | - |
| dc.title | The Effects of NF3/NH3 Remote Plasma Dry Cleaning on the Electrical Characteristics of MOS Device on the Highly Trenched Si Substrate | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | IUMRS-ICEM 2018 | - |
| dc.citation.conferencePlace | DCC, Daejeon, Korea | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)