Thermodynamic Behavior of Excitonic Emission Properties in Manganese- and Zinc-Codoped Indium Phosphide Diluted Magnetic Semiconductor Layers
- Authors
- Lee, Sejoon; Song, Emil B.; Wang, Kang L.; Yoon, Chong S.; Yoon, Im Taek; Shon, Yoon; Kang, Tae Won
- Issue Date
- Dec-2011
- Publisher
- AMER CHEMICAL SOC
- Citation
- JOURNAL OF PHYSICAL CHEMISTRY C, v.115, no.47, pp.23564 - 23567
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF PHYSICAL CHEMISTRY C
- Volume
- 115
- Number
- 47
- Start Page
- 23564
- End Page
- 23567
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/27643
- DOI
- 10.1021/jp207879b
- ISSN
- 1932-7447
- Abstract
- The thermodynamic behavior of excitonic emission properties in manganese- and zinc-codoped indium phosphide (InMnP:Zn) diluted magnetic semiconductor (DMS) layers was investigated. Compared to the InMnP:Zn DMS layer (Mn approximate to 0.06%), the inhomogeneous thermal-broadening of the excitonic-emission line-width in InMnP:Zn DMS layer (Mn approximate to 0.29%) is dominant at lower temperatures. This is attributed to the increase of ionized impurity scattering from Mn ions and results in the increase of exciton-phonon coupling strength. As a consequence, high Mn content can lead to low excitonic emission efficiency, although generally a larger Mn content is favorable to increase the Curie temperature of a DMS material.
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