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Self-heating effect on the electrical characteristics of n-MOS and p-MOS strained Si FinFETs

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dc.contributor.author김태환-
dc.date.accessioned2021-08-02T19:35:01Z-
dc.date.available2021-08-02T19:35:01Z-
dc.date.created2021-06-30-
dc.date.issued2018-07-12-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/27875-
dc.publisherKorea Nano Technology Research Society-
dc.titleSelf-heating effect on the electrical characteristics of n-MOS and p-MOS strained Si FinFETs-
dc.typeConference-
dc.contributor.affiliatedAuthor김태환-
dc.identifier.bibliographicCitationNANO KOREA 2018-
dc.relation.isPartOfNANO KOREA 2018-
dc.citation.titleNANO KOREA 2018-
dc.citation.conferencePlace킨텍스-
dc.type.rimsCONF-
dc.description.journalClass1-
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서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers

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