Cu(In,Ga)Se 2 thin film preparation from a Cu(In,Ga) metallic alloy and se nanoparticles by an intense pulsed light technique
DC Field | Value | Language |
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dc.contributor.author | Dhage, S.R. | - |
dc.contributor.author | Kim, H.-S. | - |
dc.contributor.author | Hahn, H.T. | - |
dc.date.accessioned | 2021-08-02T19:53:09Z | - |
dc.date.available | 2021-08-02T19:53:09Z | - |
dc.date.created | 2021-05-13 | - |
dc.date.issued | 2011-02 | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/28179 | - |
dc.description.abstract | The main contribution of this paper is the development of a novel process for the formation of copper indium gallium diselenide (CIGS) films. CIGS films with a thickness of 4 μm and grain size from 0.3 μm to 1 μm were prepared from a Cu(In 0.7Ga 0.3) (CIG) metallic alloy and Se nanoparticles by the intense pulsed light (IPL) technique. The melting of the CIG and Se nanoparticles and nucleation of CIGS occurred in a very short reaction time of 2 ms. It is believed that the Se diffuses into the CIG lattice to form the CIGS chalcopyrite crystal structure. The tetragonal chalcopyrite crystal structure was confirmed by x-ray powder diffraction (XRD), while the microstructure and composition were determined by field-emission scanning electron microscopy (FESEM), energy-dispersive x-ray spectroscopy (EDAX), and x-ray fluorescence (XRF) spectroscopy. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.title | Cu(In,Ga)Se 2 thin film preparation from a Cu(In,Ga) metallic alloy and se nanoparticles by an intense pulsed light technique | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, H.-S. | - |
dc.identifier.doi | 10.1007/s11664-010-1431-x | - |
dc.identifier.scopusid | 2-s2.0-79951511029 | - |
dc.identifier.wosid | 000287861900003 | - |
dc.identifier.bibliographicCitation | Journal of Electronic Materials, v.40, no.2, pp.122 - 126 | - |
dc.relation.isPartOf | Journal of Electronic Materials | - |
dc.citation.title | Journal of Electronic Materials | - |
dc.citation.volume | 40 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 122 | - |
dc.citation.endPage | 126 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordAuthor | chalcopyrite | - |
dc.subject.keywordAuthor | CIGS thin film | - |
dc.subject.keywordAuthor | intense pulsed light | - |
dc.subject.keywordAuthor | solar cells | - |
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