In-Core Power Measurement Using SiC Semiconductor Detector
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Junesic | - |
dc.contributor.author | Son, Jaebum | - |
dc.contributor.author | Kim, Yong Kyun | - |
dc.contributor.author | Park, Se Hwan | - |
dc.date.accessioned | 2021-07-30T05:05:34Z | - |
dc.date.available | 2021-07-30T05:05:34Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2020-02 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2849 | - |
dc.description.abstract | A SiC detector was fabricated and tested in harsh radiation environment of the High Flux Advanced Neutron Application Reactor (HANARO) reactor core at Korea Atomic Energy Research Institute (KAERI). A 4H-SiC with 30 mu m thick epitaxial layer was used as the radiation sensor, and the detector was designed to be tolerable against thermal and radiation damages. Alpha response and I-V characteristics of fabricated SiC sensor was measured and detection performance of the SiC detector was evaluated in a neutron field of HANARO ex-core neutron irradiation facility. After preliminary tests, reactor power monitoring using the SiC detector was carried out by inserting it into the HANARO irradiation hole, IP-4. Radiation-induced current of the detector was recorded as reactor power increased up to 10 MWth. Maximum thermal and fast neutron fluxes were 9.4x10(12) and 2.5x10(9) neutrons/cm(2)/sec, respectively, and total neutron fluence irradiated on the detector was 4.7x10(16) neutrons/cm(2). The detector showed good linearity of response up to the tested fluence, with R-2 = 0.9997. Response speed of SiC detector was compared to that of a Rh self-powered neutron detector (SPND) in terms of signal saturation time. Averaged SiC detector saturation time was 12.8 seconds, approximately 11 times faster that of the Rh SPND. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | In-Core Power Measurement Using SiC Semiconductor Detector | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Yong Kyun | - |
dc.identifier.doi | 10.3938/jkps.76.306 | - |
dc.identifier.wosid | 000515170400007 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.76, no.4, pp.306 - 310 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 76 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 306 | - |
dc.citation.endPage | 310 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002560029 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | FAST-NEUTRON DETECTION | - |
dc.subject.keywordPlus | RADIATION TOLERANCE | - |
dc.subject.keywordPlus | CARBIDE | - |
dc.subject.keywordPlus | IRRADIATION | - |
dc.subject.keywordPlus | REACTOR | - |
dc.subject.keywordAuthor | Silicon carbide | - |
dc.subject.keywordAuthor | Semiconductor detector | - |
dc.subject.keywordAuthor | In-core detector | - |
dc.subject.keywordAuthor | In-core experiment | - |
dc.subject.keywordAuthor | Radiation damage | - |
dc.identifier.url | https://link.springer.com/article/10.3938/jkps.76.306 | - |
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