Tailored nanoplateau and nanochannel structures using solution-processed rutile TiO2 thin films for complementary and bipolar switching characteristics
DC Field | Value | Language |
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dc.contributor.author | Abbas, Yawar | - |
dc.contributor.author | Ambade, Rohan B. | - |
dc.contributor.author | Ambade, Swapnil B. | - |
dc.contributor.author | Han, Tae Hee | - |
dc.contributor.author | Choi, Changhwan | - |
dc.date.accessioned | 2021-07-30T05:05:40Z | - |
dc.date.available | 2021-07-30T05:05:40Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2019-08 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/2881 | - |
dc.description.abstract | We synthesized two different nanostructures of rutile TiO2 (r-TiO2) thin films on a fluorine-doped tin oxide (FTO) substrate at the lowest temperature reported until now and fabricated resistive random access memory (RRAM) devices with these r-TiO2 thin films having the stacking sequence of Ag/r-TiO2/FTO. Complementary resistive switching (CRS) and bipolar resistive switching (BRS) were observed in different thicknesses of r-TiO2 based devices. Benefiting from the in situ growth of the solution processed thin films and modulating the reaction growth rates, we successfully attained two different morphologies of r-TiO2 with a nanoplateau at a controlled deposition rate and pre-defined nanochannels at a higher deposition rate. The RRAM devices with nano-plateaus of r-TiO2 showed excellent CRS as well as unprecedented simultaneous observations of BRS. These CRS and BRS characteristics were reversible and reproducible. On the other hand, the tailored pre-defined nanochannels in r-TiO2 led to forming-free BRS with a pulse endurance higher than 10(7) without any degradation in the high and low resistance states. We propose a plausible switching mechanism of these unprecedented events using various physical and electrical characterization studies of low-temperature processed r-TiO2 RRAM devices. This work suggests the importance of solution-processed thin film engineering for RRAM switching with reliable and reproducible characteristics. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Tailored nanoplateau and nanochannel structures using solution-processed rutile TiO2 thin films for complementary and bipolar switching characteristics | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Han, Tae Hee | - |
dc.contributor.affiliatedAuthor | Choi, Changhwan | - |
dc.identifier.doi | 10.1039/c9nr03465j | - |
dc.identifier.scopusid | 2-s2.0-85069739783 | - |
dc.identifier.wosid | 000477704400012 | - |
dc.identifier.bibliographicCitation | NANOSCALE, v.11, no.29, pp.13815 - 13823 | - |
dc.relation.isPartOf | NANOSCALE | - |
dc.citation.title | NANOSCALE | - |
dc.citation.volume | 11 | - |
dc.citation.number | 29 | - |
dc.citation.startPage | 13815 | - |
dc.citation.endPage | 13823 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | NONVOLATILE RESISTIVE MEMORY | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | BEHAVIORS | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | TAOX | - |
dc.subject.keywordPlus | RRAM | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2019/NR/C9NR03465J | - |
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