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Improvement of ZnO Resistivie switching Devices by Metal Thin Layer on ITO Electrode for Transparent Devices
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 안진호 | - |
| dc.date.accessioned | 2021-08-02T21:52:24Z | - |
| dc.date.available | 2021-08-02T21:52:24Z | - |
| dc.date.issued | 2018-02-07 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/29612 | - |
| dc.title | Improvement of ZnO Resistivie switching Devices by Metal Thin Layer on ITO Electrode for Transparent Devices | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | The 25th Korean Conference on Semiconductors | - |
| dc.citation.conferencePlace | 강원도 하이원리조트 컨벤션호텔 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Ahn, Jinho
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)