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The Electrical Characterization of The Nano-Size Trench Structured MOS Device Assisted By CHF3-Plasma Dry Cleaning

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dc.contributor.author최창환-
dc.date.accessioned2021-08-02T21:52:32Z-
dc.date.available2021-08-02T21:52:32Z-
dc.date.created2021-06-30-
dc.date.issued2018-02-06-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/29632-
dc.publisher한국반도체산업협회-
dc.titleThe Electrical Characterization of The Nano-Size Trench Structured MOS Device Assisted By CHF3-Plasma Dry Cleaning-
dc.typeConference-
dc.contributor.affiliatedAuthor최창환-
dc.identifier.bibliographicCitation한국반도체학술대회-
dc.relation.isPartOf한국반도체학술대회-
dc.citation.title한국반도체학술대회-
dc.citation.conferencePlace강원도 하이원리조트 컨벤션 호텔-
dc.type.rimsCONF-
dc.description.journalClass2-
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