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Electrical Reponses of TaOx-Based RRAM Device to Neuromorphic Characteristics
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최창환 | - |
| dc.date.accessioned | 2021-08-02T22:51:10Z | - |
| dc.date.available | 2021-08-02T22:51:10Z | - |
| dc.date.issued | 2017-11-20 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/30023 | - |
| dc.title | Electrical Reponses of TaOx-Based RRAM Device to Neuromorphic Characteristics | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - Science and Technology - | - |
| dc.citation.conferencePlace | 나라, 일본 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)