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Fluorine doped ZnON Thin-film Transistors with high field effect mobility fabricated by reactive co-sputtering
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박진성 | - |
| dc.date.accessioned | 2021-08-02T22:51:27Z | - |
| dc.date.available | 2021-08-02T22:51:27Z | - |
| dc.date.issued | 2017-11-16 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/30068 | - |
| dc.title | Fluorine doped ZnON Thin-film Transistors with high field effect mobility fabricated by reactive co-sputtering | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2017년도 추계 학술대회 | - |
| dc.citation.conferencePlace | 경주 현대호텔 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Park, Jinseong
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)