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Hydrogen Ion Implantation-Based Wafer Bonding with Low Blister Formation Temperature (˂450oC) for M3D Integration
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최창환 | - |
| dc.date.accessioned | 2021-08-02T23:26:17Z | - |
| dc.date.available | 2021-08-02T23:26:17Z | - |
| dc.date.issued | 2017-11-08 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/30333 | - |
| dc.title | Hydrogen Ion Implantation-Based Wafer Bonding with Low Blister Formation Temperature (˂450oC) for M3D Integration | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | International Microprocesses and Nanotechnology Conference | - |
| dc.citation.conferencePlace | Jeju, Korea | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)