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Hexagonal Boron Nitride Encapsulated Tin Disulfide Transistor with Enhanced Interlayer Coupling
- Authors
- 김은규
- Issue Date
- 8-Nov-2017
- Publisher
- MNC 2017 Committee
- Citation
- 30th International Microprocesses and Nanotechnology Conference (MNC 2017)
- Conference Name
- 30th International Microprocesses and Nanotechnology Conference (MNC 2017)
- Place
- Jeju, Korea
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Collections - 서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers
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