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Effect of Oxide-Nitride-Oxide Thickness on Coupling Ratio and Back Tunneling in NAND Flash Memories
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박재근 | - |
| dc.date.accessioned | 2021-08-02T23:52:25Z | - |
| dc.date.available | 2021-08-02T23:52:25Z | - |
| dc.date.issued | 2017-10-25 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/30783 | - |
| dc.title | Effect of Oxide-Nitride-Oxide Thickness on Coupling Ratio and Back Tunneling in NAND Flash Memories | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2017 가을 학술논문발표회 및 임시총회(2017 KPS Fall Meeting) | - |
| dc.citation.conferencePlace | 경주화백컨벤션센터 | - |
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