Solution-processed ternary alloy aluminum yttrium oxide dielectric for high performance indium zinc oxide thin-film transistors
DC Field | Value | Language |
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dc.contributor.author | Lee, Jiwon | - |
dc.contributor.author | Seul, Hyeonjoo | - |
dc.contributor.author | Jeong, Jae Kyeong | - |
dc.date.accessioned | 2021-07-30T05:07:18Z | - |
dc.date.available | 2021-07-30T05:07:18Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2018-04 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/3143 | - |
dc.description.abstract | In this study, we evaluated the structural, chemical, and electrical properties of ternary alloy aluminum yttrium oxide (Al2-xYxO3) films prepared by employing a low-cost spin-cast technique. Al2-xYxO3 films annealed at 400 degrees C were found to possess smooth and excellent insulating characteristics compared to their binary Al2O3 or Y2O3 film counterparts. This superior performance of the Al2-xYxO3 films as a gate insulator can be explained based on structure stabilization from the cation alloying mixing effect. The amorphous indium zinc oxide (a-IZO) thin-film transistor (TFT) with the ternary alloy Al0.45Y1.55O3 film exhibited a high mobility of 52.9 cm(2)/V, a low subthreshold gate swing of 0.19 V/decade, a threshold voltage of -0.51 V, a high ION/OFF ratio of 4 x 10(6), and good hysteresis-free stability, suggesting that the solution-based Al0.45Y1.55O3 dielectric film is an attractive candidate as a gate dielectric for high-performance and low-cost a-IZO TFTs. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Solution-processed ternary alloy aluminum yttrium oxide dielectric for high performance indium zinc oxide thin-film transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Jae Kyeong | - |
dc.identifier.doi | 10.1016/j.jallcom.2018.01.249 | - |
dc.identifier.scopusid | 2-s2.0-85041694599 | - |
dc.identifier.wosid | 000425530700125 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.741, pp.1021 - 1029 | - |
dc.relation.isPartOf | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 741 | - |
dc.citation.startPage | 1021 | - |
dc.citation.endPage | 1029 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry | - |
dc.relation.journalWebOfScienceCategory | Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | SPRAY-PYROLYSIS | - |
dc.subject.keywordPlus | LOW-TEMPERATURE | - |
dc.subject.keywordPlus | ZNO | - |
dc.subject.keywordPlus | INSULATOR | - |
dc.subject.keywordAuthor | Solution process | - |
dc.subject.keywordAuthor | Aluminum yttrium oxide | - |
dc.subject.keywordAuthor | Ternary alloy | - |
dc.subject.keywordAuthor | Indium zinc oxide | - |
dc.subject.keywordAuthor | Thin-film transistor | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0925838818302561?via%3Dihub | - |
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