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Effect of water content on Al2O3 gate dielectrics fabricated by using mist chemical vapor deposition
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박진성 | - |
| dc.date.accessioned | 2021-08-03T00:52:59Z | - |
| dc.date.available | 2021-08-03T00:52:59Z | - |
| dc.date.issued | 2017-08-31 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/31473 | - |
| dc.title | Effect of water content on Al2O3 gate dielectrics fabricated by using mist chemical vapor deposition | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | IMID 2017 | - |
| dc.citation.conferencePlace | 부산 해운대, BEXCO | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Park, Jinseong
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)