Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Influence of Oxygen Profile in ALD HfO2-x Thin Films on Non-Volatile Resistive Switching Behaviors with a Ti/HfOx/Pt Structure
- Authors
- 최창환
- Issue Date
- 3-Jul-2017
- Place
- Gyeongju, Korea
- Conference Name
- Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Device (AWAD)
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)